This document describes the features and characteristics of the BFP405 NPN Silicon RF Transistor, which is suitable for low current applications and oscillators up to 12 GHz. It has a noise figure of 1.25 dB at 1.8 GHz and an outstanding gain of 23 dB at the same frequency. The transistor has a transition frequency of 25 GHz and utilizes gold metallization for high reliability.
The BFP405 is an NPN silicon RF transistor designed for low‑current applications and oscillators up to 12 GHz. Key specifications include a transition frequency of 25 GHz, a noise figure of 1.25 dB at 1.8 GHz, and a maximum collector‑emitter voltage of 45 V.
The device is supplied in an SOT‑343 package and includes a complete set of Gummel‑Poon SPICE parameters for simulation. Package dimensions, pin configuration, and recommended handling precautions are detailed, along with thermal resistance data and permissible pulse loads for design use.
| Transition frequency (fT) | 25 GHz |
|---|---|
| Maximum collector‑emitter voltage (VCEO) | 45 V |
| Collector current (IC) | 12 mA |
| Noise figure | 1.25 dB at 1.8 GHz |
| Total power dissipation | 55 mW |
The BFP405 has a transition frequency of 25 GHz.
The maximum collector‑emitter voltage is 45 V.
SPICE parameters are listed under the "SPICE Parameter (Gummel‑Poon Model)" section of the datasheet.