The BSS138N is a N-channel enhancement mode logic level small signal MOSFET manufactured by Infineon.
The BSS138N is an N‑channel small‑signal MOSFET offered in a PG‑SOT‑23 package. The product summary lists key features such as a maximum drain‑source voltage of 60 V, logic‑level gate drive, and RoHS‑compliant, lead‑free construction.
The document details maximum ratings, thermal characteristics, and extensive electrical parameters including continuous drain current, on‑state resistance, gate charge, and capacitances. Typical output and transfer curves, safe operating area graphs, and package dimensions are also provided.
| Continuous Drain Current (Id) @ 25 °C | 0.23 A |
|---|---|
| Power Dissipation (Pd) @ 25 °C | 0.36 W |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V – 1.4 V |
| Drain‑Source On‑Resistance (Rds(on)) | max 3.5 mΩ |
| Maximum Drain‑Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 4.2 pF |
The continuous drain current is 0.23 A at 25 °C.
The maximum power dissipation is 0.36 W at 25 °C.
The gate threshold voltage ranges from 1.0 V to 1.4 V.