IPB60R600CP is a model of the IPB60 series. It is a power transistor produced by ON Semiconductor. Its features are the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, JEDEC1) qualified, lead plating, and RoHS compliant.
The IPB60R600CP is a CoolMOS™ power transistor designed for hard‑switching SMPS topologies. It offers a low figure‑of‑merit, ultra‑low gate charge, and high peak current capability while being Pb‑free and RoHS compliant.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and package dimensions, enabling designers to evaluate the device for high‑frequency, high‑power applications.
| Continuous drain current (Id) | 6.1 A |
|---|---|
| Pulsed drain current (Ipp) | 15 A |
| Drain‑source on‑state resistance (Rds(on)) | 0.54 mΩ |
| Total gate charge (Qg) | 21 nC |
| Avalanche energy (single pulse) | 144 mJ |
The maximum continuous drain current is 6.1 A at 25 °C.
The typical drain‑source on‑state resistance is 0.54 mΩ at Vgs = 10 V and Id = 3.3 A.