SPA06N60C3 CoolMOSTM Power Transistor features: New revolutionary high voltage technology, Ultra low gate charge, Periodic avalanche rated, High peak current capability, Ultra low effective capacitances, Extreme dv /dt rated, Improved transconductance, Fully isolated package (2500 V AC; 1 minute)
The SPA06N60C3 is a high‑voltage power transistor designed for high‑frequency power conversion and control applications. It features ultra‑low gate charge, periodic avalanche rating, and a fully isolated PG‑TO220‑3‑31 package.
Key specifications include a maximum drain‑source voltage of 650 V, continuous drain current of 6.2 A, on‑state resistance up to 0.75 Ω, and a thermal resistance of 3.92 K/W. Detailed electrical, thermal, and dynamic characteristics are provided to aid designers in implementing the device safely and efficiently.
| Maximum Drain‑Source Voltage (V_DSS) | 650 V |
|---|---|
| On‑State Resistance (R_DS(on)) max | 0.75 Ω |
| Thermal Resistance Junction‑to‑Case (R_thJC) | 3.92 K/W |
| Input Capacitance (C_iss) | 620 pF |
| Output Capacitance (C_oss) | 200 pF |
The device can withstand up to 650 V between drain and source.