Samsung K4S64323LF-S(D)N/U/P CMOS SDRAM Datasheet

The K4S64323LF-S(D)N/U/P is a mobile SDRAM memory product from Samsung Electronics. It is powered by a 2.5V supply and features four banks with multiple timing configurations. It is suitable for a variety of high bandwidth and high performance memory system applications.


Samsung K4S64323LF-S(D)N/U/P CMOS SDRAM Datasheet - cover page
Brand
Samsung
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
83 KB
Published
01 April, 2012
Updated
30 September, 2023
MD5 checksum
CFB6E624FF3A0D29CE3A79A3D77D183D

About this manual

The K4S64323LF-S(D)N/U/P is a 512K × 32‑bit × 4‑bank CMOS SDRAM manufactured by Samsung. It operates with a 2.5 V power supply and supports a range of CAS latencies, burst lengths and operating frequencies up to 133 MHz.

The document provides detailed electrical ratings, package dimensions, pin functions, timing parameters, and command tables for designers integrating this memory device into high‑performance systems.

What's inside

  • Features
  • General Description
  • Ordering Information
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • AC Operating Conditions
  • Package and Pin Configuration
  • Timing Register
  • Truth Table
  • Specifications

Specifications

Capacity512K × 32 bit × 4 Banks SDRAM
Supply Voltage2.5 V (VDD/VDDQ)
Operating TemperatureExtended: -25 °C to 85 °C; Industrial: -40 °C to 85 °C
Package90‑Ball FBGA
Maximum Clock Frequency133 MHz (CL=3)

Frequently asked questions

What is the operating temperature range of the K4S64323LF‑S(D)N/U/P?

The device operates from –25 °C to 85 °C in the extended temperature range and from –40 °C to 85 °C in the industrial temperature range.

What supply voltage does the SDRAM require?

It requires a 2.5 V supply (VDD/VDDQ).

What package type is used for this memory chip?

The chip is supplied in a 90‑ball FBGA package.

What is the maximum operating frequency?

The part can run up to 133 MHz when configured with CAS latency 3.

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