K4S64323LF-S(D)G/S is a 2Mx32-bit synchronous high data rate dynamic random access memory (DRAM) manufactured by Samsung. It operates at a voltage of 2.5V and is packaged in a 90-ball FBGA package. The device features a variety of programmable functions, including CAS latency, burst length, and burst type, making it suitable for a variety of high-bandwidth and high-performance memory system applications.
The K4S64323LF‑S(D)G/S is a 512K × 32‑bit mobile SDRAM organized in four banks and fabricated with Samsung’s high‑performance CMOS technology. It supports a range of operating frequencies and burst lengths, making it suitable for high‑bandwidth memory subsystems in mobile devices.
Key features include a 2.5 V power supply, LVCMOS‑compatible I/O, partial array self‑refresh (PASR), temperature‑compensated self‑refresh (TCSR), and an extended temperature range of –25 °C to 85 °C. The part is offered in a 90‑ball FBGA package and provides detailed electrical and timing specifications for designers.
| Capacity | 512K × 32‑bit × 4 banks |
|---|---|
| Supply Voltage (Vpo) | 2.3 V min / 2.5 V typ / 2.7 V max |
| Operating Temperature | -25 °C to 85 °C |
| Package | 90‑Ball FBGA (6 × 15) |
| Refresh Period | 64 ms (4K cycle) |
The device operates from –25 °C to 85 °C.
Typical supply voltage is 2.5 V, with a range of 2.3 V to 2.7 V.
It is supplied in a 90‑ball FBGA package (6 × 15).