2SK2625LS is a low on-resistance MOSFET transistor produced by Sanyo. Its maximum drain-source voltage is 600V, maximum drain-source current is 4A, maximum gate-source voltage is 30V, and maximum power dissipation is 2.0W.
The 2SK2625LS is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. The datasheet lists its key features, package dimensions, and safety notices.
Key specifications include a 600 V drain‑to‑source breakdown voltage, 4 A continuous drain current, low on‑resistance, and fast switching times (turn‑on delay 20 ns, turn‑off delay 50 ns). Capacitance values and gate charge are also provided for circuit designers.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
| Continuous Drain Current (ID, DC) | 4 A |
| Pulse Drain Current (IDP) | 16 A |
| Input Capacitance (Ciss) | 700 pF |
| Output Capacitance (Coss) | 220 pF |
| Reverse Transfer Capacitance (Crss) | 110 pF |
| Total Gate Charge (Qg) | 20 nC |
| Turn‑ON Delay Time | 20 ns |
| Turn‑OFF Delay Time | 50 ns |
| Diode Forward Voltage | 0.88 – 1.2 V |
The device is rated for a maximum drain‑to‑source voltage of 600 V.
It can conduct up to 4 A continuously under the specified conditions.