The Sanyo 2SK2633LS is an N‑channel MOSFET designed for high‑speed switching applications. It features low on‑resistance and low gate charge, making it suitable for power conversion circuits.
The datasheet lists absolute maximum ratings, electrical characteristics, switching times, and the TO‑220F package outline. Detailed specifications are presented in the tables and can be used for design and verification. This manual is written in Japanese.
| Drain‑Source Voltage (V_DSS) | 800 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | ±80 V |
| Continuous Drain Current (I_D) | 8 A |
| Pulsed Drain Current (I_DM) | 9 A |
| Power Dissipation (P_D) | 30 W |
| Maximum Channel Temperature (T_C) | 150 °C |
| Storage Temperature (T_STG) | -55 °C to 150 °C |
| Gate‑Source Leakage Current (I_GSS) | 100 nA |
| Cut‑off Voltage (V_GS(th)) | 3.5 V (typ) |
| Input Capacitance (C_iss) | 700 pF |
| Output Capacitance (C_oss) | 180 pF |
| Reverse Transfer Capacitance (C_rss) | 100 pF |
| Turn‑on Delay (t_d(on)) | 20 ns |
| Rise Time (t_r) | 20 ns |
| Turn‑off Delay (t_d(off)) | 50 ns |
| Fall Time (t_f) | 25 ns |
The maximum drain‑source voltage is 800 V.
It is supplied in a TO‑220F package.
Turn‑on delay is 20 ns, rise time 20 ns, turn‑off delay 50 ns, and fall time 25 ns.
Contact the sales representative as indicated in the document.