This document describes the specifications of 2SK2628FS, as well as the performance, characteristics and functions of the product in an independent state.
The 2SK2628FS is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for use in standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key specifications include a 600 V drain‑to‑source breakdown voltage, 7 A continuous drain current, 24 A pulsed current capability, a typical on‑state resistance of 0.9 mΩ, and a total gate charge of 30 nC. The device is supplied in a TO‑220F‑3FS package and includes detailed electrical characteristics and recommended test circuits.
| Drain‑to‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate‑to‑Source Voltage (V_GS) | +30 V |
| Continuous Drain Current (I_D) | 7 A |
| Package Type | TO‑220F‑3FS |
The device can withstand up to 600 V between drain and source.
It is rated for a continuous drain current of 7 A.
The MOSFET is supplied in a TO‑220F‑3FS package.