This document is about SANYO's product technical information, introducing the features and characteristics of N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications.
The 2SK2627 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. It offers low ON‑resistance and fast switching times, making it suitable for power conversion and switching circuits.
The document lists absolute maximum ratings, detailed electrical characteristics, and typical performance parameters such as drain‑to‑source voltage, gate‑to‑source voltage, drain current, on‑resistance, and capacitances. Safety notices advise against use in life‑support or aircraft control systems and recommend protective circuit design.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | +30 V |
| Drain Current (DC) | 5 A |
| Drain Current (Pulse) | 20 A |
The maximum drain-to-source voltage is 600 V.
No, SANYO states the device is not guaranteed for such high‑reliability applications.