This document describes the specifications and characteristics of the 2SK2625ALS product. It is an electronic device manufactured by SANYO Semiconductor Co., Ltd. and is intended for standard applications in general electronics equipment such as home appliances, AV equipment, communication devices, office equipment, and industrial equipment. The product is not intended for use in special applications such as medical equipment, aerospace instruments, nuclear control devices, burning appliances, transportation machines, traffic signal systems, and safety equipment, nor does it provide any guarantee thereof. Customers should evaluate and test the product before use.
The SANYO 2SK2625ALS is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge and ultrahigh‑speed switching. The datasheet provides absolute maximum ratings, typical electrical parameters and package dimensions for designers.
Key specifications include a 600 V drain‑to‑source rating, 44 A continuous drain current under ideal heat‑dissipation conditions, and a typical on‑state resistance of about 2 mΩ. The document also lists switching times, avalanche energy and recommended usage precautions.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GSS) | +30 V |
The device is rated for a maximum drain‑to‑source voltage of 600 V.
Yes, the datasheet advises avoiding use of the device near highly charged objects.