SANYO 2SK2627 is a N-channel silicon MOSFET for ultrahigh-speed switching applications. It features low ON-resistance and low Qg.
The 2SK2627 is an N‑Channel silicon MOSFET designed for ultrahigh‑speed switching applications. The datasheet lists its absolute maximum ratings, electrical characteristics, and typical performance parameters, helping designers select the device for power conversion and switching circuits.
Key specifications include a 600 V drain‑to‑source breakdown voltage, 5 A continuous drain current, low on‑resistance, and fast switching times. The document also contains recommended operating conditions, package dimensions, and safety notices for high‑reliability applications.
| Drain-to-Source Voltage (VDS) | 600 V |
|---|---|
| Gate-to-Source Voltage (VGS) | +30 V |
| Continuous Drain Current (Id) @ 25 °C | 5 A |
| Pulse Drain Current (Id) (10 µs, <1 % duty) | 20 A |
| Input Capacitance (Ciss) | 700 pF |
| Output Capacitance (Coss) | 220 pF |
| Reverse Transfer Capacitance (Crss) | 110 pF |
The maximum drain‑to‑source voltage is 600 V.
It can handle a continuous drain current of 5 A at 25 °C.
The gate‑to‑source voltage is limited to +30 V.