This document contains the datasheet information of 2SK2628FG, mainly introduces the product's performance, characteristics, functions, etc.
The 2SK2628FG is a general‑purpose N‑channel silicon MOSFET designed for low ON‑resistance, low gate charge, and ultrahigh‑speed switching. It is intended for standard electronic equipment such as home appliances, AV gear, communication devices, and industrial equipment.
Key data include a 600 V drain‑to‑source rating, 30 V gate‑to‑source limit, 7 A continuous drain current, and a typical on‑state resistance of 0.9 mΩ. The device is supplied in a TO‑220F‑3SG package; special mounting attention is required to maintain isolation between the exposed inner electrode and the heatsink.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | 30 V |
| Continuous Drain Current (I_D) | 7 A |
| Pulse Drain Current (I_D(pulse)) | 24 A |
| Input Capacitance (C_iss) | 1050 pF |
| Avalanche Energy | 98 mJ |
The device can withstand up to 600 V between drain and source.
The datasheet specifies a continuous drain current of 7 A at 25 °C.