This document describes the specifications and characteristics of the product 2SK2628ALS from SANYO Semiconductor Co., Ltd.
The 2SK2628ALS is an N‑channel silicon MOSFET intended for general‑purpose switching applications such as home appliances, AV equipment, communication devices, and industrial equipment. It offers low ON‑resistance, low gate charge, and ultrahigh‑speed switching, making it suitable for a wide range of standard electronic designs.
Key specifications include a 600 V drain‑to‑source rating, +30 V gate‑to‑source rating, continuous drain current of 6.2 A, and a pulse current capability of 24 A. The device features a typical on‑state resistance of 0.9 mΩ and a total gate charge of 30 nC. Storage temperature ranges from –55 °C to +150 °C, and users are advised to follow the safety and usage notes provided.
| Drain-to-Source Voltage (V_DSS) | 600 V |
|---|---|
| Gate-to-Source Voltage (V_GS) | +30 V |
| Storage Temperature Range | -55 °C to +150 °C |
The device can withstand up to 600 V between drain and source.
The maximum gate‑to‑source voltage is +30 V.
The MOSFET can be stored from –55 °C up to +150 °C.
Yes, avoid using the device near highly charged objects as noted in the usage note.