This document is the specification of 2SK2624FS
The SANYO 2SK2624FS is a general‑purpose N‑channel silicon MOSFET designed for low on‑resistance, low gate charge and ultrahigh‑speed switching. It is intended for standard electronic equipment such as home appliances, AV gear, communication devices and industrial equipment.
The document provides absolute maximum ratings, detailed electrical characteristics at 25 °C, package dimensions (TO‑220F‑3FS), and test circuit diagrams for switching time and avalanche resistance. Safety and usage notes are also included.
| Drain‑to‑Source Voltage (VDS) | 600 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +30 V |
| Continuous Drain Current (Id) at 25 °C | 3.5 A |
| Pulse Drain Current (Id,pulse) | 12 A |
| Maximum Power Dissipation (Pd) | 20 W |
| Reverse Transfer Capacitance (Crss) | 85 pF |
| Diode Forward Voltage (VSD) | 0.98‑1.2 V |
The device is rated for a maximum drain‑to‑source voltage of 600 V.
It can carry up to 3.5 A of continuous drain current.