2SK2618LS is a N-channel MOS Silicon FET produced by SANYO. It has the characteristics of low on-state resistance and low Qg, and is suitable for high-frequency switching applications.
The Sanyo 2SK2618LS is a very‑high‑speed switching MOSFET intended for low ON‑state resistance and low gate charge applications. The handbook lists its features, typical applications, and key electrical parameters.
Key specifications include a 500 V drain‑to‑source rating, 5 A continuous drain current, 30 W power dissipation at 25 °C, and fast switching times (20 ns turn‑on, 50 ns turn‑off). Detailed capacitance and gate‑charge values are provided for circuit designers.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Gate to Source Voltage (VGSS) | +30 V |
| Drain Current (DC) (ID) | 5 A |
| Drain Current (Pulse) (IDP) | 20 A |
| Allowable Power Dissipation (PD) at 25 °C | 30 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
| Static Drain‑to‑Source RDS(on) (ID=3 A, VGS=15 V) | 0.95 Ω – 1.25 Ω |
| Input Capacitance (Ciss) | 700 pF |
| Turn‑ON Delay Time (td(on)) | 20 ns |
The device is rated for a maximum drain‑to‑source voltage of 500 V.
The typical input capacitance is 700 pF measured at VDS = 20 V.
The turn‑on delay time is specified as 20 ns.