This document describes the features and characteristics of TOSHIBA's 2SK2613 field effect transistor, which is suitable for switching regulators, DC-DC converters, and motor drive applications. It has low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement-mode characteristics. Its maximum rated voltage is 1000V and maximum rated current is 24A.
The document describes the Toshiba 2SK2613 N‑channel MOSFET, a silicon power transistor intended for switching regulator, DC‑DC converter and motor‑drive applications. It lists the device’s absolute maximum ratings, electrical characteristics, and thermal properties, and includes notes on reliability and handling.
Key specifications such as drain‑source voltage, on‑resistance, gate threshold and leakage current are presented, together with recommended operating conditions, marking information, and restrictions on use in safety‑critical or high‑reliability equipment.
| Drain‑source voltage (VDS) | 1000 V |
|---|---|
| Maximum drain current (ID) | 8 A |
| On‑resistance (RDS(on)) | 1.4 Ω (typ.) |
| Gate threshold voltage (Vth) | 2.0 ~ 4.0 V |
| Leakage current (Ipg) | 100 pA (max) |
The device can withstand up to 1000 V between drain and source.
It is an electrostatic‑sensitive device and should be handled with caution.
The storage temperature range is –55 °C to 150 °C.
The typical on‑resistance is 1.4 Ω.