This is a technical document about the 2SK2613 TOSHIBA field effect transistor. The transistor is suitable for switching regulator applications, DC-DC converter, and motor drive applications. It features low drain-source ON resistance, high forward transfer admittance, and low leakage current.
The Toshiba 28K2613 is an N‑channel silicon MOSFET designed for switching regulator, DC‑DC converter, and motor‑drive applications. The document lists its electrical parameters, thermal data, and recommended handling procedures.
Key sections include electrical characteristics, maximum ratings, thermal resistance, device marking, and restrictions on product use. The datasheet also notes that the device is electrostatic‑sensitive and must be handled with caution.
| Drain‑source voltage (VDS) | 1000 V |
|---|---|
| On‑resistance (RDS(on)) | 1.4 (typ.) |
| Gate threshold voltage (Vth) | 2.0 – 4.0 V |
| Continuous drain current (Id) | 8 A |
| Storage temperature range | -55 °C to 150 °C |
The device can withstand up to 1000 V drain‑source voltage.
The typical on‑resistance is 1.4 (typ.).
It can be stored between –55 °C and 150 °C.
Yes, it is an electrostatic‑sensitive device and should be handled with caution.