2SK2611 is a N-channel MOSFET manufactured by Toshiba. It features low on-resistance, high forward transfer gain and low leakage current. It is suitable for DC-DC converters, relay drivers and motor drivers applications.
The 2SK2611 is a silicon N‑channel MOSFET designed for DC‑DC conversion, relay drive and motor drive applications. It offers a high drain‑source voltage rating and low on‑resistance, making it suitable for high‑power switching tasks.
Key specifications include a 900 V drain‑source breakdown voltage, 27 A pulse drain current, and a typical on‑resistance of 1.1 Ω. The device is electrostatic‑sensitive and must be handled with care, keeping the channel temperature below 150 °C and observing the recommended derating guidelines.
| Drain‑source voltage (V_DSS) max | 900 V |
|---|---|
| Pulse drain current (I_PP) max | 27 A |
| On‑resistance (R_DS(on)) typical | 1.1 Ω |
| Input capacitance (C_ISS) | 2040 pF |
| Power dissipation (P_D) max | 150 W |
| Storage temperature range | -55 °C to 150 °C |
The device is rated for a maximum drain‑source voltage of 900 V.
Its typical on‑resistance is 1.1 Ω (max 1.4 Ω).
It is an electrostatic‑sensitive device; handle with caution and keep the channel temperature below 150 °C.