The STP6NB80 and STP6NB80FP are high‑voltage, low‑on‑resistance power MOSFETs in TO‑220 and TO‑220FP packages. They feature an advanced MESH OVERLAY™ process, providing very low intrinsic capacitances, minimized gate charge, and excellent avalanche and dv/dt capabilities.
The document provides absolute maximum ratings, thermal data, avalanche characteristics, detailed electrical parameters, switching performance, and mechanical dimensions for both device variants, enabling designers to select the appropriate MOSFET for high‑current, high‑speed switching applications such as SMPS, DC‑AC converters, and motor drives.
| Maximum junction temperature (Tj max) | 150 °C |
|---|---|
| Gate charge (Qg) | 33 nC (typ) for STP6NB80FP |