SGS-THOMSON STP6NA80 STP6NA80FI Manual

Update: 30 September, 2023

STP6NA80 is a STMicroelectronics N-channel enhancement mode fast power MOS transistor, its typical RDS(on) is 1.68 ohm, gate to source voltage rating is ±30V, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, gate charge minimized, reduced threshold voltage spread.

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File format: PDF

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MD5 Checksum: 8DB77144722D1461746EF7BC023ECAA1

Publication date: 01 April, 2012

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PDF Link: SGS-THOMSON STP6NA80 STP6NA80FI Manual PDF