The STP7NE10L power MOSFET is built with STMicroelectronics' Single Feature Size™ strip‑based process, delivering high packing density, low on‑resistance, and robust avalanche characteristics. It is intended for applications such as DC motor control, DC‑DC and DC‑AC converters, and synchronous rectification.
The datasheet provides absolute maximum ratings, detailed electrical and thermal characteristics, mechanical dimensions, and switching parameters, enabling designers to evaluate the device for high‑performance power conversion and motor‑drive circuits.
| Drain‑source Voltage (VDS) | 100 V |
|---|---|
| Gate‑source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) @ 25 °C | 7 A |
| Continuous Drain Current (ID) @ 100 °C | 4.9 A |
| Pulsed Drain Current (ID,pulse) | 28 A |
| Typical On‑Resistance (RDS(on)) | 0.3 Ω |
| Total Power Dissipation (PD) | 45 W |
| Avalanche Current (IAval) | 7 A |
| Single‑Pulse Avalanche Energy (Eav) | 40 mJ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.33 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 100 °C/W |
| Case‑to‑Sink Thermal Resistance (RθCS, typ.) | 1.5 °C/W |
The device can withstand up to 100 V between drain and source.
The typical on‑resistance is 0.3 Ω.
It can carry a continuous drain current of 7 A at 25 °C.
Junction‑to‑case is 3.33 °C/W, junction‑to‑ambient is 100 °C/W, and case‑to‑sink typical is 1.5 °C/W.