Key facts
- Brand
- STMicroelectronics
- Model
- STP7NE10L
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-01
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STMicroelectronics STP7NE10L Power MOSFET Datasheet
The STP7NE10L Power MOSFET is built with STMicroelectronics' Single Feature Size™ strip‑based process, delivering high packing density, low on‑resistance (typ. 0.3 Ω) and robust avalanche performance. It is supplied in a TO‑220 package and is suited for applications requiring high reliability.
Key electrical parameters include a drain‑source voltage rating of 100 V, continuous drain current of 7 A at 25 °C, total dissipation of 45 W, and a junction‑to‑ambient thermal resistance of 100 °C/W. The device is recommended for DC motor control, DC‑DC and DC‑AC converters, and synchronous rectification.
STMicroelectronics STP7NE10L specifications
| Drain‑source Voltage (VDS) | 100 V |
|---|---|
| Gate‑source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) @ 25 °C | 7 A |
| Continuous Drain Current (ID) @ 100 °C | 4.9 A |
| Pulsed Drain Current (ID,pulse) | 28 A |
| Typical On‑Resistance (RDS(on)) | 0.3 Ω |
| Total Power Dissipation (PD) | 45 W |
| Avalanche Current (IAval) | 7 A |
| Single‑Pulse Avalanche Energy (Eav) | 40 mJ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.33 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 100 °C/W |
| Case‑to‑Sink Thermal Resistance (RθCS, typ.) | 1.5 °C/W |
All STMicroelectronics STP7NE10L documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Which applications are recommended for this MOSFET?
It is suited for DC motor control, DC‑DC and DC‑AC converters, and synchronous rectification.
What is the maximum drain‑source voltage rating?
The device can withstand up to 100 V between drain and source.
What is the typical on‑resistance of the STP7NE10L?
The typical on‑resistance is 0.3 Ω.