STP7NE10 is an N-channel power MOSFET with a operating voltage of 100V, on-resistance of 0.3Ω, current of 7A, exceptional dv/dt capability, and 100% avalanche tested. This product is suitable for applications such as DC motor control, DC-DC and DC-AC converters, and synchronous rectification.
The STP7NE10 power MOSFET is built with STMicroelectronics' Single Feature Size™ strip‑based process, delivering high packing density, low on‑resistance and rugged avalanche characteristics. It is intended for applications such as DC motor control, DC‑DC and DC‑AC converters, and synchronous rectification.
The document provides comprehensive electrical parameters (drain‑source voltage, current ratings, on‑resistance, switching times), thermal data (junction‑to‑case and junction‑to‑ambient resistance), avalanche specifications, and mechanical dimensions for the TO‑220 package.
| Drain‑source Voltage (VDS) | 100 V |
|---|---|
| Gate‑source Voltage (VGS) | +20 V |
| Continuous Drain Current (Id) @ 25 °C | 7 A |
| Continuous Drain Current (Id) @ 100 °C | 4.9 A |
| Pulsed Drain Current (Id,pulse) | 28 A |
| Total Power Dissipation (PD) | 45 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 3.33 °C/W |
| Maximum Junction Temperature (Tj max) | 175 °C |
| Package | TO‑220 |
The maximum continuous drain current at 25 °C is 7 A.
The MOSFET is rated for a drain‑source voltage of 100 V.
It is supplied in a TO‑220 package.
The device can operate up to a junction temperature of 175 °C.