The STP7NE10 Power MOSFET is built with STMicroelectronics' Single Feature Size™ strip‑based process, delivering high packing density, low on‑resistance (typical 0.32 Ω) and robust avalanche performance. It is intended for DC motor control, DC‑DC & DC‑AC converters, and synchronous rectification applications.
The datasheet provides absolute maximum ratings, thermal resistance values, detailed electrical characteristics (static, dynamic, and switching parameters), mechanical dimensions for the TO‑220 package, and a disclaimer on usage and liability.
| Continuous drain current (ID) @ 25 °C | 7 A |
|---|---|
| Pulsed drain current (ID,pulse) | 28 A |
| Total power dissipation @ 25 °C | 45 W |
| Thermal resistance junction‑case | 3.33 °C/W |
| Avalanche current (IAvalanche) | 7 A |
| Single‑pulse avalanche energy | 40 mJ |
| Output capacitance (Coss) | 45 pF |
It can conduct up to 7 A continuously at 25 °C.
The MOSFET is supplied in a TO‑220 package.
The device can dissipate up to 45 W at 25 °C.