STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET is a 800V ultra-low Rds(on) gate diode protected power MOSFET, mainly used for single-ended SMPS, monitors, computers and industrial applications.
This datasheet provides the electrical, thermal and mechanical specifications for the STP7NC80Z, STP7NC80ZFP, STB7NC80Z and STB7NC80Z‑1 MOSFETs. The devices are 800 V, 6.5 A N‑channel power MOSFETs with integrated gate‑source Zener diodes for enhanced ESD protection.
Key sections include absolute maximum ratings, detailed electrical characteristics, avalanche and protection features, as well as package dimensions and footprint data for TO‑220, TO‑220FP, D2PAK and DPAK variants.
| Storage Temperature Range | -65 °C to 150 °C |
|---|---|
| Maximum Junction Temperature (Tj) | 150 °C |
Yes, they have back‑to‑back gate‑source Zener diodes that enhance ESD capability and protect against voltage transients.