This document describes the technical specifications and features of Micron's 256Mb: x4, x8, x16 SDRAM product.
The 256 Mb SDRAM family from Micron includes three configurations: 64 M x 4, 32 M x 8, and 16 M x 16. Each device is a quad‑bank, fully synchronous DRAM that operates at 3.3 V and supports PC66, PC100, and PC133 standards.\n\nThe datasheet details functional block diagrams, pin and ball descriptions, timing tables, electrical characteristics, and command definitions. It also covers initialization procedures, power‑down modes, auto‑refresh, self‑refresh, and read/write operation for each configuration.
| Capacity | 256 Mb |
|---|---|
| Organization | 64 M x 4, 32 M x 8, 16 M x 16 |
| Supply Voltage | 3.3 V ±0.3 V |
| Operating Temperature (Commercial) | 0 °C to +70 °C |
| Operating Temperature (Industrial) | -40 °C to +85 °C |
| Burst Lengths | 1, 2, 4, 8, full page |
| Maximum Clock Frequency | 143 MHz (CL = 2) |
It requires a +3.3 V supply with a tolerance of ±0.3 V.
The SDRAM supports programmable burst lengths of 1, 2, 4, 8, or a full page.