64Mb: x32 DDR SDRAM is a product of Micron Technology, Inc., which has bidirectional data storage buffer (DQS), internal pipelined double data rate (DDR) architecture, two data access cycles, reduced output drive option, differential clock inputs (CK and CK#), commands entered on each positive CK edge, DQS edge aligned with data for READs, center aligned with data for WRITEs, dynamic clock lock (DLL) to align DQ and DQS transitions with CK, four internal memory rows can work simultaneously, data mask (DM) for masking write data, programmable burst lengths: 2, 4, 8 or full page, 32 ms, 4096-cycle auto refresh (7.8µs/cycle), auto precharge option, auto refresh and self refresh modes, programmable input / output (SSTL_2 compatible) and other features
This datasheet describes the Micron MT46V2M32V1 DDR SDRAM, a high‑speed CMOS memory organized as 2 Meg × 32 with four internal banks. It outlines key features such as bidirectional data strobe, differential clock inputs, programmable burst lengths, and auto‑refresh modes.
The document includes a functional block diagram, detailed pin descriptions for the 100‑pin TQFP package, initialization procedures, register definitions, timing parameters, and operating conditions needed for system designers and engineers.
| Capacity | 64 Mb (x32) |
|---|---|
| Organization | 2 Meg × 32 (4 banks) |
| Supply Voltage | 2.5 V Vop/VppQ |
| Package | 100‑pin TQFP, 0.65 mm lead pitch |
| Maximum Clock Rate | 200 MHz @ CL=3‑5 |
| Burst Lengths | 2, 4, 8, full page |
The device operates from a 2.5 V Vop/VppQ supply.
It contains four internal banks for concurrent operation.
Supported burst lengths are 2, 4, 8, or a full page.
The part is offered in a 100‑pin TQFP package with a 0.65 mm lead pitch.