MT46H8M16 is a DDR SDRAM chip produced by Micron Technology, Inc. It has 2 Meg x 16 x 4 Banks and four internal banks for concurrent operation.
The MT46H8M16LF is a 128 Mb mobile DDR SDRAM (8 Meg × 16) offered in a 60‑ball VFBGA package. It provides bidirectional data strobe per byte, internal pipelined DDR architecture, and differential clock inputs. The device supports programmable burst lengths of 2, 4, or 8, auto‑precharge, and various refresh modes including partial array self‑refresh.
Key specifications include a supply voltage of 1.8 V (±0.1 V), operating temperature ranges of 0 °C to +70 °C (commercial) and –40 °C to +85 °C (industrial), and clock rates up to 133 MHz. The datasheet also lists timing parameters, package dimensions, and configuration addressing details.
| Capacity | 128 Mb (8 Meg × 16) |
|---|---|
| Supply Voltage | VDD = +1.8 V ±0.1 V |
| Package Type | 60‑Ball VFBGA |
| Maximum Clock Rate | 133 MHz |
| Burst Lengths | 2, 4, or 8 |
The device operates at VDD = +1.8 V with a tolerance of ±0.1 V.
It is supplied in a 60‑ball VFBGA (lead‑free) package.
The memory supports programmable burst lengths of 2, 4, or 8.