This document describes the technical specifications and features of the 128Mb x8DDR400 SDRAM product produced by Micron Technology, Inc., including timing parameters, architecture, refresh count, address allocation, data rate, etc.
The addendum updates the MT46V16M8 DDR400 SDRAM data sheet with key differences required to support enhanced speeds. It describes the 128 Mb (16 M × 8) memory organized as 4 M × 8 × 4 banks, its 400 Mb/s data rate, and the 200 MHz clock frequency.
The document includes the 66‑Pin TSOP package dimensions, detailed pin descriptions, timing parameters, absolute maximum ratings, and both DC and AC electrical characteristics needed for design and verification.
| Data rate | 400 Mb/s |
|---|---|
| Supply voltage (Vop) | 2.55 V – 2.75 V |
| Package type | 66‑Pin TSOP |
| Memory configuration | 128 Mb (16 M × 8) organized as 4 M × 8 × 4 banks |
| Refresh count | 4 K |
| Operating temperature (ambient) | 0 °C – +50 °C |
| Absolute maximum Vpp supply voltage | -1 V to +3.6 V |
The latency should be set to 3 clocks.
Vop should be between 2.55 V and 2.75 V.
It uses a 66‑Pin TSOP package.
The device operates from 0 °C up to +50 °C.