1Gb NAND Flash Memory Features
The MT29F1GxxABB is a 1 Gb NAND flash memory device offered in x8 and x16 organizations. It provides a 2,112‑byte (x8) or 1,056‑word (x16) page size, 64‑page (128 KB + 4 KB) blocks, and a total of 1,024 blocks per device. The datasheet lists the full command set, timing diagrams, and electrical characteristics needed for system integration.
The device is supplied in a 63‑ball VFBGA package (13 mm × 10.5 mm × 1.0 mm) and operates from 1.65 V to 1.95 V across commercial (0 °C to +70 °C) and extended (‑40 °C to +85 °C) temperature ranges. Performance figures include 25 µs max random read latency, 50 ns min sequential read, 250 µs typical program page time, and 2 ms typical block erase time. Endurance is rated at 100 k program/erase cycles with a 10‑year data retention.
| Page size (x8) | 2,112 bytes (2,048 + 64 bytes) |
|---|---|
| Page size (x16) | 1,056 words (1,024 + 32 words) |
| Block size | 64 pages (128 KB + 4 KB) |
| Device size | 1 Gb (1,024 blocks) |
| Random READ latency | 25 µs (max) |
| Sequential READ latency | 50 ns (min) |
| Program PAGE time | 250 µs (typical) |
| Block ERASE time | 2.0 ms (typical) |
| Endurance | 100,000 program/erase cycles |
| Data retention | 10 years |
| Supply voltage (VCC) | 1.65 V – 1.95 V |
| Operating temperature (commercial) | 0 °C to +70 °C |
| Package | 63‑ball VFBGA 13 mm × 10.5 mm × 1.0 mm |
The x8 page size is 2,112 bytes (2,048 + 64 bytes).
Random READ latency is specified as 25 µs maximum.
The device is rated for 100,000 program/erase cycles.
It operates from 1.65 V to 1.95 V (VCC).