The document introduces the features and characteristics of the MITSUBISHI INTELLIGENT POWER MODULES PM75CLB120 flat-base insulated package released in May 2005. The module adopts a new 5th generation IGBT (CSTBT) chip, which improves performance through a 1µm fine rule process. It has a low Vce(sat) and over-temperature protection function. In addition, the module also adopts a new small package, reducing the size by 32% and the thickness by 22%.
The PM75CLB120 is a flat‑base, insulated Intelligent Power Module featuring a 5th‑generation IGBT (CSTBT) chip, reduced package size and integrated gate‑drive and protection logic. It is intended for general‑purpose inverters, servo drives and other motor‑control applications.
The manual provides detailed electrical and mechanical ratings, recommended operating conditions, testing precautions, and performance curves to aid designers and service technicians in integrating the module safely and efficiently.
| Collector‑Emitter Voltage (VCE(sat)) | 1.9 V @ Tj=125 °C |
|---|---|
| Maximum Collector Current | 75 A |
| Collector Dissipation | 595 W |
| Junction Temperature Range | -20 °C to +150 °C |
| UL Recognition | Yellow Card No.E80276 |
The maximum collector current is 75 A.
Typical VCE(sat) is 1.9 V at a junction temperature of 125 °C.
Yes, it is UL recognized under Yellow Card No.E80276.