MGF1907A is a low noise GaAs FET from MITSUBISHI SEMICONDUCTOR
The MGF1907A is a low‑noise GaAs FET with an N‑channel Schottky gate, intended for use in S‑ to X‑band amplifiers and oscillators. It is supplied in a hermetically sealed metal‑ceramic tape‑carrier package suitable for microstrip circuits.
Key specifications include a minimum noise figure of 4 dB at 12 GHz, a maximum drain current of 100 mA, and a total power dissipation of 360 mW. Detailed S‑parameter and noise‑parameter tables are provided, along with recommended bias conditions and safety design guidelines.
| Minimum noise figure (NFmin) | 4.0 dB |
|---|---|
| Total power dissipation (Pd) | 360 mW |
The recommended bias is Vps = 8 V with a drain current of 10 mA (maximum) at 12 GHz.
Designs should include temperature limits, proper storage conditions, and measures to prevent circuit malfunctions or fire hazards.