The MGF4931AM is a super-low noise InGaAs HEMT (High Electron Mobility Transistor) designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.
The MGF4931AM is a super‑low‑noise InGaAs HEMT transistor designed for use in S‑to‑Ku band low‑noise amplifiers. It comes in a 4‑pin flat‑lead package offering a compact, cost‑effective solution.
Key features include a typical noise figure of 0.60 dB at 12 GHz, an associated gain of 11.5 dB, and a recommended bias of VDS = 2 V with ID = 7.5 mA. The datasheet provides absolute maximum ratings, electrical characteristics, S‑parameters, and ordering information, and confirms RoHS compliance.
| Typical Noise Figure (NFmin) | 0.60 dB |
|---|---|
| Typical Associated Gain (Gs) | 11.5 dB |
| Gate‑to‑Drain Voltage (V_GD) | -4 V |
| Gate‑to‑Source Voltage (V_GS) | -4 V |
| Recommended Bias Current (ID) | 7.5 mA |
| Total Power Dissipation (P_T) | 50 mW |
| Storage Temperature Range | -55 °C to +125 °C |
| RoHS Compliance | Yes |
The recommended bias is VDS = 2 V with a drain current ID = 7.5 mA.
Yes, the MGF4931AM is RoHS compliant, indicated by the letter “G” after the lot marking.
The typical noise figure is 0.60 dB at 12 GHz.
It is intended for S‑to‑Ku band low‑noise amplifiers.