MGF4934BM is a super-low noise InGaAs HEMT transistor designed for use in S to Ku band amplifiers. It is packaged in a 4pin flat lead package, offering a small-thin size and high cost performance.
The MGF4934BM is a super‑low‑noise InGaAs HEMT designed for S‑to‑Ku band amplifiers. It comes in a 4‑pin flat lead package offering a compact, cost‑effective solution.
The document provides detailed electrical characteristics, absolute maximum ratings, S‑parameter data, noise performance, and ordering information, along with safety and export‑control notices.
| Gate‑to‑drain voltage (VGDO) | 3 V |
|---|---|
| Gate‑to‑source voltage (VGSO) | 3 V |
| Drain current (IDSS) | 10 mA (typ.) |
| Total power dissipation (PT) | 50 mW |
| Maximum storage temperature | +125 °C |
| Noise figure (NFmin) at 12 GHz | 0.50 dB (typ.) |
| Associated gain (Gs) at 12 GHz | 12.5 dB (typ.) |
| Package type | 4‑pin flat lead |
| RoHS compliance | Yes |
The recommended bias is VDS = 2 V and ID = 10 mA.
Yes, the device is RoHS compliant as indicated by the “G” lot marking.
It uses a 4‑pin flat lead package.
The typical minimum noise figure is 0.50 dB.