The MGF1403B is a low‑noise N‑channel GaAs FET designed for Ku‑band and millimeter‑wave applications. It is supplied in a hermetically sealed metal‑ceramic package that minimizes parasitic losses and is suitable for microstrip circuits.
The document lists key electrical ratings, typical performance curves, S‑parameters, and noise parameters, and includes recommended bias conditions (Vps = 3 V, Ip = 10 mA) as well as safety guidance for reliable use in electronic equipment.
| Noise figure (typ) | 1.8 dB @ 12 GHz |
|---|---|
| Associated gain (typ) | 10.5 dB @ 12 GHz |
| Gate‑to‑drain breakdown voltage | 5 V |
| Gate‑to‑source breakdown voltage | 6 V |
| Total power dissipation | 8 mW |
The typical noise figure is 1.8 dB at 12 GHz.
The device can tolerate up to 5 V gate‑to‑drain and 6 V gate‑to‑source.