The document describes the features and characteristics of the MGF4934CM super-low noise InGaAs HEMT, which is designed for use in S to Ku band amplifiers. It offers low noise figure and high associated gain.
The MGF4934CM is a super‑low‑noise InGaAs HEMT designed for S‑ to Ku‑band amplifiers. It comes in a 4‑pin flat‑lead package and offers high gain and very low noise figure.
The document provides detailed electrical characteristics, absolute maximum ratings, recommended bias conditions, ordering information, RoHS compliance, S‑parameter data and noise parameters, along with safety and legal notices from Mitsubishi Electric.
| Noise figure (NFmin) at 12 GHz | 0.50 dB (Typ.) |
|---|---|
| Associated gain (Gs) at 12 GHz | 13.0 dB (Typ.) |
| Gate‑to‑drain voltage (Vgdo) max | 3 V |
| Gate‑to‑source voltage (Vgso) max | 3 V |
| Total power dissipation (PT) max | 50 mW |
The recommended bias is VDS = 2 V and ID = 10 mA.
Yes, the MGF4934CM is RoHS compliant, indicated by the letter “G” after the lot marking.
The typical noise figure is 0.50 dB.
The typical associated gain is 13.0 dB.