16W GaAs FET for 5.8 ~ 6.75GHz band
The MGFC42V5867 is a GaAs power FET designed for 5.8 – 6.75 GHz band amplifiers. It features an internally 50 Ω matched design, 16 W output capability, and a hermetically sealed metal‑ceramic package for high reliability.
The document provides electrical characteristics, recommended bias conditions, absolute maximum ratings, and S‑parameter data, together with safety and legal notices for designers using this component.
| Frequency range | 5.8 – 6.75 GHz |
|---|---|
| Typical output power (P1dB) | 42.5 dBm |
| Typical linear power gain (GLP) | 9 dB |
| Recommended drain bias voltage (VDS) | 10 V |
| Gate‑to‑drain voltage (VGDO) max | -15 V |
| Gate‑to‑source voltage (VGSO) max | -15 V |
| Total power dissipation | 78.9 W |
| Channel temperature limit | 175 °C |
| Storage temperature range | -65 °C to 175 °C |
The recommended drain bias voltage (VDS) is 10 V.
The typical P1dB is 42.5 dBm.
The typical linear power gain (GLP) is 9 dB.
The maximum gate‑to‑drain voltage is -15 V.