The MGFC42V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers.
The MGFC42V6472A is an internally impedance‑matched GaAs power FET designed for 6.4 – 7.2 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and is intended for use in C‑band power amplifiers and digital radio communication applications.
Key specifications include a typical output power of 16 W, a linear power gain of 8 dB, and a power‑added efficiency of 31 % across the 6.4 – 7.2 GHz range. Recommended bias conditions are VDS = 10 V and ID = 4.5 A. Absolute maximum ratings list V_GDO and V_GSO at 15 V, drain current up to 15 A, and total power dissipation of 93.7 W. Safety warnings emphasize proper circuit design to avoid injury, fire, or equipment damage.
| Frequency band | 6.4 – 7.2 GHz |
|---|---|
| Typical output power | 16 W |
| Linear power gain (GLP) | 8.0 dB |
| Power‑added efficiency (PAE) | 31 % |
| Drain current (ID) – typical | 4.5 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Maximum drain current | 15 A |
| Total power dissipation | 93.7 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 16 W at frequencies between 6.4 GHz and 7.2 GHz.
Recommended bias is VDS = 10 V with a drain current ID = 4.5 A.
Both the gate‑to‑drain and gate‑to‑source breakdown voltages are limited to 15 V.
It operates in the C‑band, specifically 6.4 – 7.2 GHz.