The MGFC42V7785A is an internally matched GaAs power FET specially designed for use in 7.7-8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. It features high output power, high gain and high efficiency.
The MGFC42V7785A is a GaAs power FET designed for C‑band (7.7‑8.5 GHz) amplifiers. It features internal 50 Ω matching, 16 W typical output power, 7 dB typical linear gain, and 28 % typical power‑added efficiency.
Mitsubishi Electric emphasizes safety, recommending non‑flammable materials, auxiliary protection circuits, and careful thermal management. The device is supplied in a hermetically sealed metal‑ceramic package and is covered by standard semiconductor usage warnings.
| Frequency band | 7.7‑8.5 GHz |
|---|---|
| Typical output power | 16 W |
| Linear power gain (GLP) | 7.0 dB |
| Power‑added efficiency (PAE) | 28 % |
| Third‑order IM distortion (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD) | 15 V |
| Gate‑to‑source breakdown voltage (V_GS) | 15 V |
| Drain current (I_D) | 15 A |
| Total power dissipation | 93.7 W |
| Storage temperature range | -65 °C to +175 °C |
The typical PAE is 28 % at 7.7‑8.5 GHz.
The maximum drain current is 15 A.