The MGFC44V3642 is an internally matched GaAs power FET especially designed for use in 3.6-4.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC44V3642 is a C‑band internally matched GaAs power FET designed for 3.6‑4.2 GHz band power amplifiers. It offers 24 W typical output power, 11 dB linear gain and 35 % typical power‑added efficiency in a hermetically sealed metal‑ceramic package.
Typical applications include C‑band power amplifiers and digital radio communication systems. The datasheet also provides recommended bias conditions, absolute maximum ratings, and safety notices for circuit designers.
| Frequency band | 3.6‑4.2 GHz |
|---|---|
| Typical output power | 24 W |
| Linear Power Gain | 11.0 dB (typ.) |
| Power Added Efficiency | 35 % (typ.) |
| Drain current (max) | 20 A |
| Total power dissipation | 93 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 24 W at 3.6‑4.2 GHz.
Recommended bias is VDS = 10 V, ID = 6.4 A, and RG = 250 Ω.
The maximum drain current rating is 20 A.
Typical power‑added efficiency is 35 %.