MGFX39V0717 is a high-power, high-gain, high-efficiency GaAs FET produced by Murata, mainly used in 10.7-11.7GHz frequency band power amplifiers, with a maximum output power of 8W
The MGFX39V0717 is an internally impedance‑matched GaAs power FET designed for use in 10.7‑11.7 GHz band amplifiers. Its hermetically sealed metal‑ceramic package provides high reliability for demanding RF applications.
Typical specifications include 8 W output power, 7 dB linear gain, and 26 % power‑added efficiency. Recommended bias is VDS = 10 V with ID = 2.4 A. Absolute maximum ratings list a drain current of 5.6 A and a total power dissipation of 428 W, with a thermal resistance of 3.5 °C/W. Safety warnings emphasize proper circuit design and material selection.
| Frequency band | 10.7‑11.7 GHz |
|---|---|
| Typical output power | 8 W |
| Linear power gain (GLP) | 7 dB |
| Power‑added efficiency (PAE) | 26 % |
| Recommended bias voltage | VDS = 10 V, ID = 2.4 A |
| Maximum drain current | 5.6 A |
| Total power dissipation | 428 W |
| Thermal resistance (RθJC) | 3.5 °C/W |
It operates in the 10.7‑11.7 GHz band.
The typical output power is 8 W.
Use a drain‑source voltage of 10 V with a drain current of 2.4 A.
The typical PAE is 26 %.