The MGFK33V4045 is an internally matched GaAs power FET designed for use in 14.0-14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFK33V4045 is an internally impedance‑matched GaAs power FET designed for 14.0 – 14.5 GHz band amplifiers, offering up to 2 W output in a hermetically sealed metal‑ceramic package. Key features include 50 Ω matching, flip‑chip mounting, high linear gain and high power‑added efficiency.
The document provides electrical characteristics, absolute maximum ratings, typical performance curves, S‑parameter data and safety recommendations. It also lists recommended bias conditions (VDS = 8 V, ID = 700 mA) and handling guidelines for reliable circuit design.
| Frequency band | 14.0 – 14.5 GHz |
|---|---|
| Typical output power | 2 W |
| Linear power gain (GLP) | 5.5 – 7 dB |
| Power added efficiency (PAE) | 22 % |
| Gate‑to‑drain breakdown voltage (VGD) | 215 V |
| Gate‑to‑source breakdown voltage (VGS) | 215 V |
| Drain current (ID) | 1.8 A |
| Total power dissipation (PT) | 17 W |
| Thermal resistance (Rth) | 10 °C/W |
| Storage temperature range | -65 °C to +175 °C |
It is designed for the 14.0 – 14.5 GHz band.
The typical output power is 2 W (approximately 32‑33 dBm).
Recommended bias is VDS = 8 V and ID = 700 mA.
Both gate‑to‑drain and gate‑to‑source breakdown voltages are rated at 215 V.