MGFX36V0717 is an internally impedance-matched GaAs power FET especially designed for use in 10.7 – 11.7 GHz band amplifiers. It features high output power (4W), high linear power gain (8dB), and high power added efficiency (28%)
The MGFX36V0717 is a GaAs power FET designed for use in 10.7‑11.7 GHz band power amplifiers. It features internal impedance matching, a typical output power of 4 W, a linear power gain of 8 dB, and a power‑added efficiency of 28 % across the specified frequency range. The device is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Safety is emphasized throughout the document. Users are advised to keep safety first in circuit designs, include auxiliary circuits where needed, use non‑flammable materials, and take measures to prevent malfunction or fire. Recommended bias conditions are VDS = 10 V and ID = 1.2 A.
| Typical Output Power | 4.0 W @ 10.7‑11.7 GHz |
|---|---|
| Power Added Efficiency (typ) | 28 % @ 10.7‑11.7 GHz |
| Linear Power Gain (typ) | 8.0 dB @ 10.7‑11.7 GHz |
| Maximum Drain Current | 2.8 A |
| Gate‑to‑Drain Breakdown Voltage | 15 V |
| Reverse Gate Current (max) | -9.0 mA |
| Forward Gate Current (max) | 18.0 mA |
| Total Power Dissipation (max) | 272 W |
| Operating Temperature Range | Up to 175 °C |
The typical output power is 4.0 W when operated at 10.7‑11.7 GHz.
The recommended bias is VDS = 10 V and ID = 1.2 A.