The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC45V6472A is an internally impedance‑matched GaAs power FET designed for 6.4‑7.2 GHz band amplifiers. It offers a typical output power of 32 W, a linear gain of 8 dB, and a power‑added efficiency of 28 % while maintaining low distortion (IM3 ≈ ‑45 dB). The device is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Typical applications include C‑band power amplifiers and digital radio communication systems. The document also includes safety guidance, recommending proper circuit layout, use of non‑flammable materials, and preventive measures to avoid malfunction or injury.
| Frequency band | 6.4 — 7.2 GHz |
|---|---|
| Typical output power | 32 W |
| Typical linear gain (GLP) | 8.0 dB |
| Typical power‑added efficiency (PAE) | 28 % |
| Typical third‑order intermodulation (IM3) | -45 dBc |
| Recommended bias voltage (VDS) | 10 V |
| Gate‑to‑drain breakdown voltage (VGD) | -15 V |
| Maximum drain current | 25 A |
| Maximum power dissipation | 150 W |
| Thermal resistance | 1 °C/W |
| Storage temperature range | -65 °C to +175 °C |
| Publication date | April 2011 |
The typical output power is 32 W when operated in the 6.4‑7.2 GHz band.
Recommended bias is VDS = 10 V, ID = 8.0 A, and RG = 250 Ω.
The maximum drain current rating is 25 A.
Users are advised to keep safety first, use non‑flammable materials, and provide auxiliary circuits to prevent malfunction.