MGFK30V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0-14.5GHz band amplifiers. The product features reliable packaging, high output power, high linear gain and high power added efficiency.
The MGFK30V4045 is a GaAs power FET designed for X/Ku‑band (14.0‑14.5 GHz) applications such as power amplifiers. It features an internally 50 Ω matched, flip‑chip mounted package that provides high output power, linear gain, and high power‑added efficiency.
Key specifications include a typical output power of 1.1 W, linear power gain of 8 dB, and power‑added efficiency of 24 % at 14.0‑14.5 GHz. The device is rated for a gate‑to‑drain breakdown voltage of 215 V, drain current up to 1 A, and operates safely within a storage temperature range of –65 °C to +175 °C. Safety warnings emphasize proper circuit design and handling.
| Frequency band | 14.0‑14.5 GHz |
|---|---|
| Typical output power | 1.1 W |
| Linear power gain (GLP) | 8.0 dB (typ) |
| Power‑added efficiency (PAE) | 24 % (typ) |
| Gate‑to‑drain breakdown voltage (VGD) | 215 V |
| Gate‑to‑source breakdown voltage (VGS) | 215 V |
| Maximum drain current | 1000 mA |
| Reverse gate current (IGR) | 3 mA |
| Forward gate current (IGF) | 5 mA |
| Total power dissipation | 1 W |
| Storage temperature range | -65 °C to +175 °C |
The MGFK30V4045 delivers a typical output power of 1.1 W at 14.0‑14.5 GHz.
Recommended bias is VDS = 8 V with ID = 350 mA.
The device provides a typical linear power gain of 8 dB.
Its typical power‑added efficiency is 24 %.