The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC44V6472 is an internally impedance‑matched GaAs power FET designed for use in 6.4‑7.2 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and is intended for applications such as C‑band power amplifiers and digital radio communication.
Key specifications include a typical output power of 24 W, linear gain of 8.0 dB, and power‑added efficiency of 31 % at 6.4‑7.2 GHz. Recommended bias conditions are VDS = 10 V, ID = 6.4 A, and RG = 25 Ω. The device’s absolute maximum ratings, electrical characteristics, and S‑parameter data are detailed in the sheet, along with safety and legal notices from Mitsubishi Electric Corporation.
| Frequency band | 6.4 – 7.2 GHz |
|---|---|
| Typical output power | 24 W |
| Typical linear gain (GLP) | 8.0 dB |
| Typical power‑added efficiency (PAE) | 31 % |
| Typical third‑order intermodulation (IM3) | -42 dBc |
| Recommended drain current (ID) | 6.4 A |
| Gate‑to‑drain breakdown voltage (VGD0) | 15 V |
| Total power dissipation (PT) | 93 W |
| Storage temperature range | -65 °C to +175 °C |
| Thermal resistance (Rth) | 1.6 °C/W |
The recommended bias is VDS = 10 V, ID = 6.4 A, and RG = 25 Ω.
The absolute maximum drain current rating is 20 A.
It operates in the 6.4 GHz to 7.2 GHz band.
The typical PAE is 31 % at 6.4‑7.2 GHz.