MGFK39V4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The device features high output power, high linear power gain and high power added efficiency.
The MGFK39V4045 is a GaAs power FET designed for use in 14.0‑14.5 GHz band amplifiers. It features an internally impedance‑matched 50 Ω system and a hermetically sealed metal‑ceramic package for high reliability.
Typical performance includes 8 W output power, 5.5 dB linear power gain, and 20 % power‑added efficiency. The datasheet provides absolute maximum ratings, electrical characteristics, recommended bias conditions (VDS = 10 V, ID = 2.4 A), and extensive safety guidelines for circuit designers.
| Frequency band | 14.0‑14.5 GHz |
|---|---|
| Power added efficiency (typical) | 20 % |
| Linear power gain (typical) | 5.5 dB |
| Maximum drain current | 6 A |
| Gate‑to‑drain breakdown voltage | 215 V |
| Total power dissipation (max) | 428 W |
Recommended bias is VDS = 10 V and ID = 2.4 A.
It advises keeping safety first, using non‑flammable materials, proper placement of auxiliary circuits, and following the listed maximum ratings.