The MGFK25V4045 is an internally matched GaAs power FET especially designed for use in 14.0-14.5GHz band amplifiers. The device features high output power, high linear gain and high power added efficiency. It is suitable for 14.0-14.5GHz band power amplifiers.
The MGFK25V4045 is an internally impedance‑matched GaAs power FET designed for 14.0‑14.5 GHz band amplifiers. The hermetically sealed metal‑ceramic package provides high reliability and the device is rated for 0.3 W typical output power.
Key electrical characteristics include a typical linear power gain of 9 dB, power‑added efficiency of 25 %, and a maximum drain current of 500 mA. Recommended bias conditions are VDS = 8 V and ID = 80 mA, and the part is qualified for storage temperatures from –65 °C to +175 °C.
| Frequency band | 14.0 – 14.5 GHz |
|---|---|
| Typical output power | 0.3 W |
| P1dB output power (typical) | 23 dBm |
| Linear Power Gain (GLP) | 9 dB (typ) |
| Power Added Efficiency (PAE) | 25 % (typ) |
| Gate‑to‑drain breakdown voltage (Vgd) | 215 V |
| Gate‑to‑source breakdown voltage (Vgs) | 215 V |
| Saturated drain current (Ids) | 500 mA (max) |
| Transconductance (gm) | 100 mS |
| Thermal resistance (Rth) | 40 °C/W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias conditions | VDS = 8 V, ID = 80 mA |
It is an internally impedance‑matched GaAs power FET especially designed for use in 14.0‑14.5 GHz band amplifiers.
The recommended bias is VDS = 8 V and ID = 80 mA.
The device delivers a typical output power of 0.3 W.
The absolute maximum saturated drain current is 500 mA.