This document describes an internally matched power GaAs FET designed for use in amplifiers in the 13.75-14.50 GHz band. It features high output power, high linear power gain, and high power added efficiency.
The MGFK38A3745 is a GaAs power FET designed for X/Ku‑band (13.75‑14.50 GHz) amplifiers. It features an internally impedance‑matched 50 Ω design, high linear power gain, and a typical output power of 6 W.
Key specifications include a typical linear power gain of 8 dB, power‑added efficiency of 30 %, and robust voltage and temperature ratings. The document also provides recommended bias conditions, S‑parameter data, and extensive safety and disclaimer information.
| Frequency band | 13.75 – 14.50 GHz |
|---|---|
| Typical output power (Pout) | 6 W (typ) |
| Power added efficiency (PAE) | 30 % (typ) |
| Linear power gain (GLP) | 8 dB (typ) |
| Total power dissipation | 37.5 W |
| Storage temperature range | -65 °C to +175 °C |
| Maximum operating temperature | 175 °C |
| Gate‑to‑source breakdown voltage (VGS(off)) | 710 V |
| Gate‑to‑drain breakdown voltage (VGD) | 15 V |
| Recommended bias conditions | VDS=10 V, IDq=1.5 A, Rg=1000 Ω, Ta=25 °C |
The typical output power is 6 W at 13.75‑14.50 GHz.
The typical PAE is 30 % at the specified frequency band.
Recommended bias is VDS = 10 V, IDq = 1.5 A, Rg = 1000 Ω, at a case temperature of 25 °C.
Users should keep safety first, use non‑flammable materials, and place auxiliary circuits to prevent fire or injury.